发明名称 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH WAFER FRONT SIDE GAS PURGE
摘要 <p>PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH WAFER FRONT SIDE GAS PURGE A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. Gas flow is confined at the edge of the workpiece within a gap at the edge of the workpiece, the gap configured to be on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. The process further includes evacuating the lower process zone, generating a plasma in an external chamber from a polymer etch precursor gas, and introducing a by-product from the plasma into the lower process zone. The process further includes pumping a purge gas into the upper process zone to remove polymer etch species from the upper process zone. FlG. 1A</p>
申请公布号 SG144878(A1) 申请公布日期 2008.08.28
申请号 SG20080007254 申请日期 2008.01.25
申请人 APPLIED MATERIALS, INC. 发明人 COLLINS KENNETH S.;HANAWA HIROJI;NGUYEN ANDREW;BALAKRISHNA AJIT;PALAGASHVILI DAVID;CRUSE JAMES P.;SUN JENNIFER Y.;TODOROW VALENTIN N.;RAUF SHAHID;RAMASWAMY KARTIK;SCHNEIDER GERHARD M.;YOUSIF IMAD;SALINAS MARTIN JEFFREY
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