| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve resistance to electromigration in copper (Cu) wiring. <P>SOLUTION: The copper wiring 10 is to be of a structure such that copper particles 10a at the central part thereof are relatively large and copper particles 10a in an upper section and a lower section are relatively small. Such a structure can be formed by controlling current density in electroplating when the copper wiring 10 is formed by a Damascene method. In the copper wiring 10 with such a structure constructed, current is likely to relatively easily flow in more the central section than the upper section, and the scattering of copper atoms in the upper section is likely to be suppressed, further, this allows the scattering of copper atoms from an interface at a cap film 14 to be suppressed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
