发明名称 |
FABRICATION OF SEMICONDUCTOR DEVICE HAVING COMPOSITE CONTACT |
摘要 |
A method of fabricating a semiconductor device with a composite contact is provided. The fabrication includes forming the composite contact to a semiconductor layer in a semiconductor structure. The composite contact is formed by forming a DC conducting electrode attached to a semiconductor layer in a semiconductor structure and forming a capacitive electrode that is partially over the DC conducting electrode and extends beyond the DC conducting electrode. The composite contact provides a combined resistive-capacitive coupling to the semiconductor layer. As a result, a contact impedance is reduced when the corresponding semiconductor device is operated at high frequencies.
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申请公布号 |
US2008206974(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20070781308 |
申请日期 |
2007.07.23 |
申请人 |
SIMIN GRIGORY;SHUR MICHAEL;GASKA REMIGIJUS |
发明人 |
SIMIN GRIGORY;SHUR MICHAEL;GASKA REMIGIJUS |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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