发明名称 |
Phase-change memory and fabrication method thereof |
摘要 |
A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.
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申请公布号 |
US2008203374(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20080010885 |
申请日期 |
2008.01.30 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;PROMOS TECHNOLOGIES INC.;WINBOND ELECTRONICS CORP. |
发明人 |
CHUO YEN;HSU HONG-HUI |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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