| 摘要 |
The present invention is a method of manufacturing a photoelectric conversion device having a multilayered interconnection (wiring) structure disposed on a semiconductor substrate, including steps of forming a hole in a region of the interlayer insulation film corresponding to an electrode of the transistor; burying an electroconductive substance in the hole; forming a hydrogen supplying film; conducting a thermal processing at a first temperature to supply a hydrogen from the hydrogen supplying film to the semiconductor substrate; forming the multilayered interconnection structure using Cu in a wiring material; and forming a protective film covering the multilayered interconnection structure, wherein the step of forming the multilayered interconnection structure, and the step of forming the protective film are conducted at a temperature not higher than the first temperature.
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