发明名称 Method for designing semiconductor device and semiconductor device
摘要 A method for designing a semiconductor device and a semiconductor device of the present invention permits the achievement of a predetermined pattern area ratio while power supply lines are reinforced by connecting a dummy metal line, which is formed in an unoccupied region of a wiring layer for the purpose of achieving the predetermined area ratio, at its two or more points with a power supply line for VDD or VSS.
申请公布号 US2008203562(A1) 申请公布日期 2008.08.28
申请号 US20080081727 申请日期 2008.04.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ARAKI TAKAYUKI;KIMURA FUMIHIRO;SHIMADA JUNICHI;FUJITA KAZUHISA
分类号 H01L23/48;G06F17/50 主分类号 H01L23/48
代理机构 代理人
主权项
地址