| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a metal film whose electric resistance is remarkably reduced compared with the case where film formation is performed only by heating. <P>SOLUTION: The metal film forming method comprises: a stage where the surface of a base material is coated with metal colloid in which metal colloidal particles are composed of metal particles and a protective agent, wherein the protective agent has a carbon skeleton comprising either or both of nitrogen and oxygen in the molecule and also has a structure of being coordinately modified on the surface of each metal particle with one or more kinds selected from the group consisting of nitrogen, oxygen, a nitrogen-containing atomic group and an oxygen-containing atomic group as an anchor, and the protective agent has a hydroxyalkyl group in the molecular structure, and the metal colloidal particles are dispersed into an aqueous or nonaqueous dispersion medium or a dispersion medium obtained by mixing them at a prescribed ratio; a stage where the base material is naturally dried, and the dispersion medium in the metal colloid is removed; and a stage where, while holding the base material at room temperature to 200°C, plasma is emitted under the conditions where output is 50 to 600 W, and also, emission time per cm<SP>2</SP>is 0.5 to 60 s, so as to form a metal film on the surface of the base material. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
