| 摘要 |
PROBLEM TO BE SOLVED: To perform etching without penetrating an etching stop film and stopping on the way, even when a space between the ends of holes is 10μm or larger or narrow around 0.1μm, when a substrate to be etched containing silicon and carbon is subjected to plasma etching and make a hole. SOLUTION: When over-etching is performed after main etching, a raw gas containing carbon and fluorine is changed into a plasma, and a negative DC voltage is applied to an upper electrode provided facing a substrate. COPYRIGHT: (C)2008,JPO&INPIT
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