| 摘要 |
A method for manufacturing a semiconductor device having a silicon-on-insulator region and a bulk region in a same semiconductor substrate, the method including: (a) forming a protection film on the semiconductor substrate in the bulk region; (b) exposing a surface of the semiconductor substrate in the silicon-on-insulator region from under the protection film; (c) forming a first semiconductor layer and subsequently a second semiconductor layer on the semiconductor substrate in the silicon-on-insulator region and in the bulk region, using an epitaxy method after the step (a); (d) etching the first semiconductor layer and the second semiconductor layer partially, so as to form a first trench which exposes a side surface of the first semiconductor layer in the silicon-on-insulator region; (e) etching the first semiconductor layer through the first trench with an etching condition in which the first semiconductor layer is easier to be etched than the second semiconductor layer, so as to form a cavity between the semiconductor substrate and the second semiconductor layer in the silicon-on-insulator region; and (f) forming a buried insulating film inside the cavity.
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