发明名称 Three-Dimensional Cascaded Power Distribution in a Semiconductor Device
摘要 An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.
申请公布号 US2008203445(A1) 申请公布日期 2008.08.28
申请号 US20080120899 申请日期 2008.05.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BERNSTEIN KERRY;COTEUS PAUL W.;EMMA PHILIP GEORGE;HARTSTEIN ALLAN MARK;KOSONOCKY STEPHEN V.;PURI RUCHIR;RITTER MARK B.
分类号 H01L29/80 主分类号 H01L29/80
代理机构 代理人
主权项
地址