发明名称 |
Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip |
摘要 |
A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.
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申请公布号 |
US2008203407(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20080011458 |
申请日期 |
2008.01.25 |
申请人 |
OSRAM OPTO SEMICONDUCTOR GMBH |
发明人 |
AHLSTEDT MAGNUS;HOPPEL LUTZ;PETER MATTHIAS;SABATHIL MATTHIAS;STRAUSS UWE;STRASSBURG MARTIN |
分类号 |
H01L21/20;H01L33/00;H01L33/16 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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