发明名称 WAVELENGTH SELECTING METHOD, FILM THICKNESS MEASURING METHOD, FILM THICKNESS MEASURING APPARATUS, AND THIN FILM SILICON DEVICE MANUFACTURING SYSTEM
摘要 <p>A film thickness measurement error is reduced. Illuminating light having different wavelengths is applied to a plurality of samples formed on a substrate whereupon thin films having different film qualities and thicknesses are formed, and evaluation values relating to the light quantities of transmitted light when the illuminating light of each wavelength is applied. Based on the measurement results, film thickness characteristics indicating correlative relationship between the film thickness and the evaluation value in each film quality condition are obtained for each wavelength, and a wavelength having a measurement difference of the evaluation value in the film quality condition within a prescribed range is selected for each film thickness characteristic.</p>
申请公布号 WO2008102485(A1) 申请公布日期 2008.08.28
申请号 WO2007JP71179 申请日期 2007.10.31
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD.;SAKAI, SATOSHI;IIDA, MASAMI;KAWAZOE, KOHEI 发明人 SAKAI, SATOSHI;IIDA, MASAMI;KAWAZOE, KOHEI
分类号 G01B11/06 主分类号 G01B11/06
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