发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A semiconductor integrated circuit device is provided to simultaneously realize an improvement of an operation speed and low power consumption by supplying an optimal voltage to respective circuit blocks. A semiconductor integrated circuit device includes a first chip(CHP1) and a second chip(CHP2). The first chip includes a first circuit block and a first conversion circuit. The first circuit block has a first transistor, a first node, and a second node. A first power being a potential difference between the first node and the second node is supplied to the first circuit block. The second circuit block transmits a signal amplitude of an output signal of the first circuit block to an outside of the first circuit block. The second circuit block has a second transistor, a third node, and a fourth node. A second power being a potential difference between the third node and the fourth node is supplied to the second circuit block. The second circuit block converts a signal amplitude of an output signal of the first circuit block into a second voltage, and transmits the second voltage to the second circuit block.
申请公布号 KR20080078794(A) 申请公布日期 2008.08.28
申请号 KR20080080499 申请日期 2008.08.18
申请人 KABUSHIKI KAISHA HITACHI SEISAKUSHO(D/B/A HITACHI, LTD.) 发明人 MIZUNO HIROYUKI;KANNO YUSUKE;YANAGISAWA KAZUMASA;YASU YOSHIHIKO;OODAIRA NOBUHIRO
分类号 H01L27/04;H01L27/085;H01L21/82;H01L21/822;H01L23/528;H01L27/092;H03K19/00;H03K19/0944 主分类号 H01L27/04
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