| 摘要 |
PROBLEM TO BE SOLVED: To realize an ion implantation device in which impurity concentration profile that is implanted into a target can be controlled freely, and an ion implantation method. SOLUTION: The ion implantation device 10 is equipped with an inner pressure control device 15 by which a gas is introduced into a passage course 13 of an ion beam IB and the passage course 13 is controlled at a prescribed inner pressure, and by the inner pressure control device 15, the gas is introduced into the ion beam passage course 13, and since the implantation into a semiconductor substrate 30 is carried out after the inner pressure of the passage course 13 is controlled at the prescribed inner pressure, the gas can be arranged to exist in the orbit of the ion beam IB. By this, since ion dissociation or neutralization can be formed by making the ion beam IB collide with the gas, the concentration profile of the impurities implantated into the semiconductor substrate 30 can be controlled freely. COPYRIGHT: (C)2008,JPO&INPIT
|
