发明名称 Semiconductor wafer with division guide pattern
摘要 A plurality of semiconductor elements and division regions are provided on a semiconductor subsubstrate. A modification region is provided in the semiconductor substrate. A division guide pattern is provided at least in a portion of each division region. A cleavage produced from a starting point corresponding to the modification region is guided by the division guide pattern.
申请公布号 US2008203538(A1) 申请公布日期 2008.08.28
申请号 US20080149148 申请日期 2008.04.28
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KUMAKAWA TAKAHIRO;UTSUMI MASAKI;MATSUSHIMA YOSHIHIRO;MATSUURA MASAMI
分类号 H01L23/00;H01L21/78 主分类号 H01L23/00
代理机构 代理人
主权项
地址