发明名称 SHALLOW TRENCH ISOLATION DUMMY PATTERN AND LAYOUT METHOD USING THE SAME
摘要 A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.
申请公布号 US2008209381(A1) 申请公布日期 2008.08.28
申请号 US20080116284 申请日期 2008.05.07
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 DOONG KELVIN YIH-YUH;HSIA CHIN-CHIU
分类号 G06F17/50;H01L21/3105;H01L21/762 主分类号 G06F17/50
代理机构 代理人
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