发明名称 |
SHALLOW TRENCH ISOLATION DUMMY PATTERN AND LAYOUT METHOD USING THE SAME |
摘要 |
A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.
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申请公布号 |
US2008209381(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20080116284 |
申请日期 |
2008.05.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
DOONG KELVIN YIH-YUH;HSIA CHIN-CHIU |
分类号 |
G06F17/50;H01L21/3105;H01L21/762 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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