发明名称 |
METHOD FOR FABRICATING STRAINED-SILICON METAL-OXIDE SEMICONDUCTOR TRANSISTORS |
摘要 |
A method for fabricating strained-silicon transistors is disclosed. First, a semiconductor substrate is provided and a gate structure and a spacer surrounding the gate structure are disposed on the semiconductor substrate. A source/drain region is then formed in the semiconductor substrate around the spacer, and a first rapid thermal annealing process is performed to activate the dopants within the source/drain region. An etching process is performed to form a recess around the gate structure and a selective epitaxial growth process is performed to form an epitaxial layer in the recess. A second rapid thermal annealing process is performed to redefine the distribution of the dopants within the source/drain region and repair the damaged bonds of the dopants.
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申请公布号 |
US2008206942(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20070678627 |
申请日期 |
2007.02.26 |
申请人 |
TING SHYH-FANN;HUANG CHENG-TUNG;JENG LI-SHIAN;LEE KUN-HSIEN;HUNG WEN-HAN;CHENG TZYY-MING;WU MENG-YI;HSIAO TSAI-FU;CHAN SHU-YEN |
发明人 |
TING SHYH-FANN;HUANG CHENG-TUNG;JENG LI-SHIAN;LEE KUN-HSIEN;HUNG WEN-HAN;CHENG TZYY-MING;WU MENG-YI;HSIAO TSAI-FU;CHAN SHU-YEN |
分类号 |
H01L21/8238;H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
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