发明名称 PROCESSING SYSTEM WITH IN-SITU CHEMICAL SOLUTION GENERATION
摘要 A system for processing a workpiece includes a dry process chamber, such as a plasma etching chamber, and a wet process chamber, such as a spin/spray chamber. Gas supply lines supply gases to the dry process chamber, and to a chemical solution generator. A liquid supply line supplies a liquid, such as de-ionized water, to the chemical solution generator. The chemical solution generator manufactures liquid chemical solutions in situ, for point of use in the wet process chamber. The system allows for both wet and dry processing with few or no separate liquid chemical supply lines.
申请公布号 US2008202564(A1) 申请公布日期 2008.08.28
申请号 US20070679479 申请日期 2007.02.27
申请人 SCRANTON DANA 发明人 SCRANTON DANA
分类号 B08B3/00 主分类号 B08B3/00
代理机构 代理人
主权项
地址