发明名称 |
Semiconductor heterostructure |
摘要 |
The present invention relates to a semiconductor heterostructure comprising a support substrate with a first in-plane lattice parameter, a buffer structure formed on the support substrate and having on top in a relaxed state a second in-plane lattice parameter, and a multi-layer stack of ungraded layers formed on the buffer structure. It is the object of the present invention to provide a semiconductor hetero-structure of the above mentioned type with a lower surface roughness. The object is solved by a heterostructure of the above mentioned type, wherein said ungraded layers are strained layers, wherein said strained layers comprise at least one strained smoothing layer of a semiconductor material having in a relaxed state a third in-plane lattice parameter which is between the first and the second lattice parameter.
|
申请公布号 |
EP1933384(A1) |
申请公布日期 |
2008.06.18 |
申请号 |
EP20060291955 |
申请日期 |
2006.12.15 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
AULNETTE, CECILE;FIGUET, CHRISTOPHE |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|