| 摘要 |
948,011. Semi-conductor amplifying circuits. SOC. SUISSE POUR L'INDUSTRIE HORLOGERE S.A. March 24 1961 [April 1 1960], No. 10781/61. Heading H3T. [Also in Division H1] A two-stage amplifier comprises two fieldeffect transistors in cascade. As shown, each transistor comprises a common crystal 1 of P- type Si, an N-type layer 3, 4 and a P-type zone 5, 6, the layers 3, 4 being biased by a D.C. source S1 positive with respect to the earthed crystal 1 and zones 5, 6. Electrodes 7, 8 on layer. 3 and electrodes 9, 10 on layer 4 are connected, in series with a resistor 12, 13 respectively, across a second D.C. source 52. The input at terminals 25, 26 is impressed between the crystal 1 and one plate of capacitor C1, the other plate of which is connected to a control electrode 15 contacting zone 5 and, through a resistor 19, to earth. The output from the first stage is passed by a capacitor C2 to a control electrode 16 contacting zone 6 and, via a resistor 20, to earth. The output from the second stage is passed by a capacitor C3 to output terminals 29, 39. According to the extent of the reverse bias on layers 3, 4, the space charge regions associated with the crystal-layer junctions and the layer-zone junctions may permit currents through the layers between electrodes 7, 8 and 9, 10, or they may join, or even increase beyond the pinch-off value. The inputs to control electrodes 15, 16 modulate the layer currents. |
