EMBEDDED RESISTIVE THIN FILM LAYER AND DEPOSITION METHOD THEREOF ONTO SUBSTRATE TO BE DEPOSITED

摘要

A resistive thin film layer and a deposition method thereof are provided to realize a relatively high electricity resistance property and a relatively low heat resistance coefficient property by distributing uniformly a noble metal of nano-meter size within a tantalum nitride thin film. An embedded resistive thin film layer, in which a noble metal of nano-meter size is distributed uniformly, is provided to a Ta-N parent material. The embedded resistive thin film, which has a relatively high electric resistance property and relatively low heat resistance coefficient property, is deposited on the surface of a substrate. Wherein, a tantalum nitride layer is formed by deposing the Ta-N on the surface of the substrate. And a noble metal is deposited as a particle state of nano-meter size, so as to be distributed uniformly within the tantalum nitride layer.