MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY PANEL

摘要

A method for manufacturing a thin film transistor array panel is provided to enhance reliability by improving stability and mobility of a thin film transistor. A gate line is formed on a substrate(110). A gate insulating layer is formed on the gate line. An amorphous silicon layer having a thickness of 1500-1800 angstrom is formed on the gate insulating layer. An impure amorphous silicon layer having a thickness of 300-500 angstrom is formed on the amorphous silicon layer. An intrinsic semiconductor and an impure semiconductor are formed by etching the amorphous silicon layer and the impure amorphous silicon layer. A data line and a drain electrode(175) are formed on the impure semiconductor. A pixel electrode(191) is connected to the drain electrode.