| 摘要 |
A TFT(Thin Film Transistor), a flat panel display including the TFT and a method of manufacturing the flat panel display are provided to secure process stability such that TFTs have a uniform channel length and obtain stabilized uniform channel characteristic. A TFT includes a first electrode(122) formed on a substrate(110), an insulating layer(130) formed on the first electrode, and a first semiconductor layer(141). The first semiconductor layer is formed on a portion of the insulating layer, which corresponds to the first electrode, and includes a channel region, a first region and a second region respectively disposed on both sides of the channel region. The TFT further includes an insulating pattern(169) formed on the channel region of the first semiconductor layer, a second semiconductor layer(151,152) covering a part of the insulating pattern and the first and second regions of the first semiconductor layer, and second and third electrodes(162,163) coming into contact with the second semiconductor layer having the insulating pattern disposed therebetween. |
