Device and method for measurement of beam angle and divergence normal to plane of scanned beam or ribbon beam

摘要

The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask (310) and a profiler/sensor (314) is employed to obtain beamlets (312) from the incoming ion beam (308) and then to measure beam current at a number of vertical positions (316,318). These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.