APPARATUS FOR CONTROLLING READ LEVEL OF MEMORY CELL AND METHOD USING THE SAME

摘要

An apparatus for controlling a read level of a memory cell and a method thereof are provided to minimize error of data read out from the memory cell by selecting an optimum read level. According to a method for controlling a read level of a memory cell, metric values calculated on the basis of predetermined voltage levels and reference levels are received(S610). Addition values for each reference level are generated by performing addition operation of the metric values corresponding to the levels of a received signal among the received metric values(S630). A reference level having a maximum value among the generated addition values is selected from the reference levels(S640). A read level of a memory cell is controlled on the basis of the selected reference level(S650).