发明名称 |
Method for improving low-K dielectrics by supercritical fluid treatments |
摘要 |
A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO<SUB>2 </SUB>and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si-H to replace at least a portion of the Si-H bonds with the silicon bond forming substituent.
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申请公布号 |
US7387973(B2) |
申请公布日期 |
2008.06.17 |
申请号 |
US20040956640 |
申请日期 |
2004.09.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG CHING-YA;TSENG JOSHUA;LO HENRY |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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