| 摘要 |
A thin film piezoelectric device includes a substrate ( 12 ) having via holes ( 22 ) and a piezoelectric laminated structure ( 14 ) consisting of a lower electrode ( 15 ), a piezoelectric film ( 16 ), and an upper electrode ( 17 ) formed on the substrate ( 12 ) via an insulation layer ( 13 ). A plurality of thin film piezoelectric resonators ( 210, 220 ) are formed for the via holes ( 22 ). The piezoelectric laminated structure ( 14 ) includes diaphragms ( 23 ) located to face the via holes ( 22 ) and a support area other than those. The thin film piezoelectric resonators ( 210, 220 ) are electrically connected by the lower electrode ( 15 ). When the straight line in the substrate plane passing through the centers ( 1, 2 ) of the diaphragms ( 23 ) of the thin film piezoelectric resonators ( 210, 220 ) has the length D 1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators ( 210, 220 ) is D 0, the ratio D 1 /D 0 is 0.1 to 0.5. The via hole ( 22 ) is fabricated by the deep graving type reactive ion etching method.
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