| 摘要 |
A method of disposing mask patterns and an apparatus using the same are provided to improve the yield of a semiconductor device stably by determining disposition of assist features for improving DOF performance suitably and rapidly. At the first focus location, a first contribution function, which configures a contribution degree of an assist feature about image intensity on a main feature, is obtained(S10). At the second focus location, a second contribution function, which configures the assist feature about the image intensity on the main feature, is obtained(S20). A location of the assist feature is determined in the condition that a linear combination of the second assist function is greater than the predetermined critical value(S40). |
