| 摘要 |
A method and an apparatus for treating a substrate are provided to deposit a film on a wafer with a uniform thickness by uniformly supplying a process gas to the wafer. A substrate treating apparatus includes a process chamber(100), a support member(200), a shower head(620), a moving member, and a plasma generating member. The process chamber provides an inner space for a substrate treating process. The support member is implemented in the process chamber and supports a substrate. The shower head is arranged on the support member and supplies a source gas to the support member. The moving member moves the shower head. The plasma generating member generates plasma from the source gas.
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