METHOD OF MANUFACTURING MOSFET DEVICE

摘要

A method for manufacturing a MOSFET element is provided to form an STI(Shallow Trench Isolation) having a double layer structure by dividing an oxide layer gap-fill process into an SOG(Spin On Glass) gap-fill process and an HDP(High Density Plasma) gap-fill process. A trench is formed on a semiconductor substrate(100) by using a pad oxide layer(110) and a pad nitride layer as etch masks. A plasma nitridation process for the trench is performed. A first insulating layer(130) is formed on an entire surface of the substrate including the trench. A second insulating layer(140) is formed on the entire surface of the substrate including the trench filled with the first insulating layer. The pad oxide layer pattern is exposed by performing a planarization process for the second insulating layer and the first insulating layer.