| 摘要 |
A semiconductor storage apparatus including cell arrays, each having a plurality of memory cells connected to a pair of first and second bit lines; and sense amplifiers, each being provided corresponding to the pair of first and second bit lines and sensing data read out from the memory cell to be read out, wherein each of the sense amplifiers includes a current mirror circuit having first and second current paths connected directly or indirectly to the pair of first and second bit lines; and the current mirror circuit includes: a first transistor which has a source and a drain short-circuited to each other and flows a reference current between the source and the drain; and a second transistor, of which gate is commonly connected to a gate of the first transistor, and which flows a current passing through the memory cell to be read out between a source and a drain thereof.
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