发明名称 |
Physical vapor deposition methods for forming hydrogen-stuffed trench liners for copper-based metallization |
摘要 |
Copper-based metallization is formed in a trench on an integrated circuit substrate by forming a liner of refractory metal in the trench using physical vapor deposition, forming a copper plating seed layer on the liner using physical vapor deposition and then plating copper on the copper plating seed layer. Prior to plating copper on the copper plating seed layer, the liner and/or copper plating seed layer is stuffed with hydrogen, for example by exposing the liner and/or copper plating seed layer to a hydrogen-containing plasma during and/or after formation of the liner and/or copper plating seed layer. Related structures also are disclosed.
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申请公布号 |
US7387962(B2) |
申请公布日期 |
2008.06.17 |
申请号 |
US20050251947 |
申请日期 |
2005.10.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE KYOUNG-WOO;CHOI SEUNG-MAN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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