| 摘要 |
<p>A storage element and a memory are provided to reduce a current flowing in the storage element, by improving spin injection efficiency, as performing write operation with a current below a saturation current of a selection transistor. A storage layer(32) stores information according to magnetization state of a magnetic body. A fixed magnetization layer(31) is installed by intervening a tunnel insulation layer for the storage layer. A spin barrier layer(18) is installed in the side of the storage layer opposite to the fixed magnetization layer, and suppresses diffusion of spin-polarized electrons. A spin absorbing layer(19) comprises a non-magnetic metal layer causing spin pumping, and is installed on the spin barrier layer opposite to the storage layer. The information is written in the storage layer by changing magnetization direction in the storage layer, by injecting spin-polarized electrons by flowing a current along the stacking direction.</p> |
