发明名称 |
High efficiency and/or high power density wide bandgap transistors |
摘要 |
Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power density of at least 5 W/mm when operated at 10 GHz at drain biases from 28 V to 48 V are also provided.
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申请公布号 |
US7388236(B2) |
申请公布日期 |
2008.06.17 |
申请号 |
US20060392114 |
申请日期 |
2006.03.29 |
申请人 |
CREE, INC. |
发明人 |
WU YIFENG;PARIKH PRIMIT;MISHRA UMESH;MOORE MARCIA |
分类号 |
H01L29/43 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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