发明名称 Top patterned hardmask and method for patterning
摘要 A patterned hardmask and method for forming the same, the method including providing a substrate comprising an overlying resist sensitive to activating radiation; forming an overlying hardmask insensitive to the activating radiation; exposing the resist through the hardmask to the activating radiation; baking the resist and the hardmask; and, developing the hardmask and resist to form a patterned resist and patterned hardmask.
申请公布号 US7387969(B2) 申请公布日期 2008.06.17
申请号 US20050084495 申请日期 2005.03.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIU GEORGE;CHANG VENCENT;CHEN NORMAN;KU YAO-CHING;LIN CHIN-HSIANG;CHEN KUEI SHUN
分类号 H01L21/302 主分类号 H01L21/302
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