发明名称 |
Top patterned hardmask and method for patterning |
摘要 |
A patterned hardmask and method for forming the same, the method including providing a substrate comprising an overlying resist sensitive to activating radiation; forming an overlying hardmask insensitive to the activating radiation; exposing the resist through the hardmask to the activating radiation; baking the resist and the hardmask; and, developing the hardmask and resist to form a patterned resist and patterned hardmask.
|
申请公布号 |
US7387969(B2) |
申请公布日期 |
2008.06.17 |
申请号 |
US20050084495 |
申请日期 |
2005.03.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU GEORGE;CHANG VENCENT;CHEN NORMAN;KU YAO-CHING;LIN CHIN-HSIANG;CHEN KUEI SHUN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|