发明名称 PATTERN PEELING PROTECTING METHOD OF NO BOTTOM ANTI-REFLECTIVE COATING METAL PHOTO LITHOGRAPHY PROCESS
摘要 <p>A pattern peeling prevention method of a metal photolithography process without using a bottom anti-reflective coating metal is provided to reduce pattern peeling by controlling scanning speed of an LD nozzle for spraying a developing solution on the surface of a photoresist. A pattern peeling prevention method of a metal photolithography process reduces the pattern peeling(30) by controlling the scan speed of an LD nozzle. Wherein, the scan speed is 55 mm/s to 65 mm/s, and the scan speed is applied even when the number times of scanning is 2. Generally, when performing a strip procedure for peeling a photoresist, a selected recipe condition is varied according to the process time, power, oxygen gas, and nitrogen gas. The result of the pattern peeling is changed according the recipe condition. This pattern peeling prevention method extracts experiment data and analyzes factors causing the pattern peeling, so as to minimize the pattern peeling.</p>
申请公布号 KR20080054052(A) 申请公布日期 2008.06.17
申请号 KR20060126122 申请日期 2006.12.12
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 PARK, YOU SIC
分类号 H01L21/027 主分类号 H01L21/027
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