| 摘要 |
A substrate treating method and a substrate treating apparatus are provided to supply a source gas to a support member and a center of an inner space, respectively, by using a supply nozzle and plural injectors. A substrate treating apparatus includes a process chamber, a support member(200), a gas supply unit, and a plasma generating member(500). The support member supports the substrate. The gas supply unit supplies a source gas into the process chamber. The plasma generating member generates plasma from the source gas. The gas supply unit includes a heater(660), a rotatable support axis(682), and a fan(680). The heater heats the source gas up to a predetermined temperature. The fan is fixed on the support axis and generates a downward flow.
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