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发明名称
具多重湿蚀刻步骤之制程
摘要
本发明提供一种具多重湿蚀刻步骤之制程,系适用于三五族半导体材料结构,藉本发明多重湿蚀刻制程可使该三五族半导体材料结构具有平滑的垂直侧壁。本发明系先形成一蚀刻遮罩于该三五族半导体材料结构上,之后利用包含HBr:HCl:H2O2:H2O=5:4:1:70之蚀刻液进行湿蚀刻,接着涂布光阻、曝光、显影,而使该三五族半导体材料结构底切区域受到光阻保护,之后重覆前述上光阻及湿蚀刻步骤,以得到多重脊状侧壁结构,最后再使用前述蚀刻液修饰该多重脊状侧壁,以得到具平滑垂直侧壁之半导体结构。
申请公布号
TW200826183
申请公布日期
2008.06.16
申请号
TW095145303
申请日期
2006.12.06
申请人
国立中山大学
发明人
赖聪贤;张道源;邱建良;庄贵雅
分类号
H01L21/3063(2006.01);H01L21/302(2006.01)
主分类号
H01L21/3063(2006.01)
代理机构
代理人
郭雨岚;林发立
主权项
地址
高雄市鼓山区莲海路70号
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