| 摘要 |
A method of fabricating a semiconductor device is provided to prevent defects of a salicide pattern due to a step height of a semiconductor substrate. A first oxide layer(103) is deposited on a semiconductor substrate(100), and then a first photoresist(104) is applied on the first oxide layer. A second oxide layer(105) is deposited on the first photoresist, and then a second photoresist(106) is applied on the second oxide layer. The second photoresist is subjected to a photolithography process to expose a portion in which a contact is formed. The exposed substrate is etched to etch the second photoresist, the first oxide layer and the first photoresist. After the first oxide layer is etched, Co and Ti are deposited and annealed on the portion to form salicide.
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