| 摘要 |
A method for controlling a plasma reactor by translating desired values of m plasma parameters to values of n chamber parameters is provided to control a plasma process in a real time by optimizing target values for plasma parameters. A set of M target values for M plasma parameters selected from a group including a wafer voltage, ion density, an etch rate, wafer current, etch selectivity, ion energy and ion mass, is simultaneously translated to a set of N values for respective N chamber parameters selected from a group comprising source power, bias power, chamber pressure, inner magnet coil current, outer magnet coil current, inner zone gas flow rate, outer zone gas flow rate, inner zone gas composition, outer zone gas composition where M and N are integers. The N chamber control parameters are set to the set of N values.
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