| 摘要 |
A metal line for a semiconductor device, and a method of forming the same are provided to prevent corrosion of a metal layer by adjusting the amount of nitride injected within a chamber, so as to change crystal structure of TiN layers. A metal line(200) for a semiconductor device comprises a lower barrier metal layer(210), a metal layer, a first TiN layer(212), and a second TiN layer(214). The lower barrier metal layer is disposed on a transistor structure(100) formed on a semiconductor substrate(10), having an electrical connection with the transistor structure. The metal layer is formed on an upper surface of the lower barrier metal layer to be electrically connected. The first TiN layer having a first crystal structure, is formed on the metal layer and electrically connected to the metal layer. The second TiN layer having a second crystal structure, is formed on the first TiN layer and electrically connected to the first TiN layer.
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