| 摘要 |
The invention relates to a layered structure (1) with semiconducting materials on a support layer (3) comprising at least one planar semiconducting layer (6) and several electrodes, in particular a first (4) and second (5) one. The semiconducting layer (6) has a top (8) and bottom (7) flat face extending essentially parallel and spaced apart from one another by the height of the layer (10). The semiconducting layer (6) is also applied by the bottom flat face (7) to a flat face of the support layer (2) and the two electrodes are connected to the semiconducting layer in an electrically conducting manner The at least two electrodes are applied by means of a structuring process and are disposed on two oppositely lying faces of the semiconducting layer and/or in planes at least approximately parallel between the two faces. |
