| 摘要 |
A TFT(Thin Film Transistor) panel and a method of manufacturing the TFT panel are provided to prevent an aluminum alloy from corrosion effectively and pattern a pixel electrode together with a contact supplement member and a data line by using a single mask, thereby reducing the manufacturing cost of the TFT panel. A TFT panel includes a substrate(110), a gate line and a gate signal line of a gate driving circuit, which are formed on the substrate, a gate insulating layer(140) having a first contact hole which exposes the gate signal line, a semiconductor layer(151,154) formed on a predetermined region of the gate insulating layer, and a data line(171) including a source electrode(173) and a drain electrode(175), which are formed on the gate insulating layer and the semiconductor layer. The TFT panel further includes a data signal line of the gate driving circuit, which is formed on the gate insulating layer and connected to the gate signal line through the first contact hole, a pixel electrode(191) connected to the drain electrode, and a passivation layer(180) formed on the data line, the drain electrode and the data signal line. The data line, the drain electrode and the data signal line are formed from a three-level layer having a lower film, an intermediate film and an upper film. The lower film is formed from the same layer as the pixel electrode. |
