发明名称 PREPARATION METHOD OF VANADIUM PENOXIDE THIN FILMS HAVING MESOPOROUS STRUCTURE BY ELECTROCHEMICAL DEPOSITION AND VANADIUM PENOXIDE THIN FILMS PREPARED USING THE SAME
摘要 A method for fabricating a vanadium penoxide thin film having a mesoporous structure by an electrochemical deposition method is provided to simplify a treatment process and reduce a fabricating cost by directly using an electrode without an additional treatment process. After VOSO4 powder is dissolved in a distilled water, CTAB(cetyltrimethylammonium bromide) powder is added to react with the dissolved VOSO4 powder and hydrogen ion concentration is adjusted to fabricate an electrolyte solution. The CTAB can have 1-5 weight percent, and the electrolyte solution can have a hydrogen ion concentration of 0.1~4.0. A substrate is soaked into the electrolyte solution, and a vanadium penoxide thin film is fabricated by an electrochemical deposition method. The CTAB is removed from the thin film by using a cleaning solution.
申请公布号 KR100819870(B1) 申请公布日期 2008.04.07
申请号 KR20060110902 申请日期 2006.11.10
申请人 INHA-INDUSTRY PARTNERSHIP INSTITUTE 发明人 LEE, JIN KYU;AHN, JAE HOON;PARK, EUN KYUNG;BAECK, SUNG HYEON;PARK, SANG EON
分类号 H01L21/288 主分类号 H01L21/288
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