发明名称 |
PREPARATION METHOD OF VANADIUM PENOXIDE THIN FILMS HAVING MESOPOROUS STRUCTURE BY ELECTROCHEMICAL DEPOSITION AND VANADIUM PENOXIDE THIN FILMS PREPARED USING THE SAME |
摘要 |
A method for fabricating a vanadium penoxide thin film having a mesoporous structure by an electrochemical deposition method is provided to simplify a treatment process and reduce a fabricating cost by directly using an electrode without an additional treatment process. After VOSO4 powder is dissolved in a distilled water, CTAB(cetyltrimethylammonium bromide) powder is added to react with the dissolved VOSO4 powder and hydrogen ion concentration is adjusted to fabricate an electrolyte solution. The CTAB can have 1-5 weight percent, and the electrolyte solution can have a hydrogen ion concentration of 0.1~4.0. A substrate is soaked into the electrolyte solution, and a vanadium penoxide thin film is fabricated by an electrochemical deposition method. The CTAB is removed from the thin film by using a cleaning solution.
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申请公布号 |
KR100819870(B1) |
申请公布日期 |
2008.04.07 |
申请号 |
KR20060110902 |
申请日期 |
2006.11.10 |
申请人 |
INHA-INDUSTRY PARTNERSHIP INSTITUTE |
发明人 |
LEE, JIN KYU;AHN, JAE HOON;PARK, EUN KYUNG;BAECK, SUNG HYEON;PARK, SANG EON |
分类号 |
H01L21/288 |
主分类号 |
H01L21/288 |
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