METHOD FOR MANUFACTURING NONVOLITILE MEMORY DEVICE

摘要

A nonvolatile memory device and a method for manufacturing the same are provided to improve a charge build-up of an etching process and to minimize the damage of a tunnel oxide layer by arranging a butting contact around a cell array. A substrate(100) having a cell array region and a dummy pattern region is prepared. A tunnel oxide layer and a floating gate layer are formed on a substrate. A first butting contact(116') is configured with the floating gate layer and electrically connected to the substrate at the dummy pattern region. A blocking oxide layer and a control gate layer are formed on the floating gate layer. The control gate layer, the blocking oxide layer, the floating gate layer, and the tunnel oxide layer are patterned to form a word line being extended in a first direction on the cell array region, and a first dummy pattern(140) having the first butting contact and being extended in the first direction on the dummy pattern region.