METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor apparatus is provided to improve gate bridge trouble by performing a plasma nitride treatment process before forming a first spacer. A dielectric(102) and a poly silicon layer are formed on a semiconductor substrate(100). A preliminary gate structure(120) including a tungsten silicide pattern(114), a barrier metal pattern(116), a tungsten layer(118), and a mask pattern(112) is formed on the poly silicon layer. A plasma nitride treatment is performed on both sides of the preliminary gate structure and on the poly silicon layer to prevent the diffusion of an oxidizing agent in a subsequent oxidation process. First spacers(128) are formed on sidewalls of the nitride-treatment processed preliminary gate structure. An anisotropic etching process is performed on the poly silicon layer by using the first spacers as etching masks so that the gate oxide layer exposes to form a poly silicon layer pattern(126) and a gate structure(129). The gate structure includes the preliminary gate structure where the first spacers are formed. An oxidation treatment is performed on both sides of the gate structure.