发明名称 SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR DEVICE PRODUCTION APPARATUS
摘要 A semiconductor device production method that is used to uniformly and efficiently reduce metal oxides produced on metal (copper, for example) which forms electrodes or wirings on a semiconductor device. An object to be treated on which copper oxides are produced is put into a process chamber and is heated by a heater to a predetermined temperature. Then carboxylic acid stored in a storage tank is vaporized by a carburetor. The vaporized carboxylic acid, together with carrier gas, is introduced into the process chamber via a treating gas feed pipe to reduce the copper oxides produced on the object to be treated to metal copper. As a result, metal oxides can be reduced uniformly without making the surfaces of electrodes or wirings irregular. Moreover, in this case, carbon dioxide and water are both produced in a gaseous state. This prevents impurities from remaining on the surface of copper.
申请公布号 KR100770916(B1) 申请公布日期 2007.10.26
申请号 KR20020050274 申请日期 2002.08.24
申请人 发明人
分类号 H01L21/302;H01L21/304;B08B7/00;H01L21/00;H01L21/02;H01L21/306;H01L21/3065;H01L21/321;H01L21/3213;H01L21/768 主分类号 H01L21/302
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