Monocrystalline silicon base portion forming method for use during manufacturing of integrated electronic circuit, involves heating substrate and forming silicon layer by placing gas mixture with silane and gas in contact with substrate

摘要

#CMT# #/CMT# The method involves heating a silicon on isolator-MOS (SOI-MOS) type substrate (100) and forming a silicon base layer (1) on a surface (S) of the substrate, in adapted conditions such that the layer is monocrystalline in reduced zones (101) of the substrate and amorphous in insulating parts (102) of the substrate, by placing a gas mixture having molecules of non-chlorinated silane and carrier gas in contact with the substrate. The formed layer is engraved such that an amorphous portion of the layer is removed, and a monocrystalline portion (2) of the layer remains intact. #CMT#USE : #/CMT# Used for forming a monocrystalline silicon base portion of a transistor e.g. heterojunction bipolar transistor and MOS transistor, on a substrate surface during manufacturing of an integrated electronic circuit. #CMT#ADVANTAGE : #/CMT# The utilization of the gas mixture having non-chlorinated silane and carrier gas permits to reduce the temperature at which the substrate to be heated for forming the silicon base layer and to rapidly form the silicon base layer, thus reducing heat allocation during manufacturing of the electronic circuit, and increasing atomic diffusion intervened between parts of the circuit constituted of distinct materials, and hence presenting electronic circuit with portions of instable heat, metastable or fragile material without altering the material during formation of the monocrystalline portion. The method permits formation of the monocrystalline portion at different places of the same substrate having uniform thicknesses, thus enabling the uniform thickness of the substrate to provide stability in formation of the monocrystalline portion with respect to possible variations of physico-chemical parameters inside a substrate treatment enclosure. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a representation of a substrate treatment device. S : Surface 1 : Silicon base layer 2 : Monocrystalline portion 100 : Silicon on isolator-MOS type substrate 101 : Reduced zones 102 : Insulating parts #CMT#INORGANIC CHEMISTRY : #/CMT# The gas mixture comprises germanium compounds.