NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor light emitting device is provided to improve the light emissive efficiency of the device and to enhance ESD(ElectroStatic Discharge) characteristics by forming an electron emitting layer using GaxSc(1-x)N/AlyGa(1-y)N(0<= x< 1, 0<= y< 1) layer or GaxY(1-x)N/AlyGa(1-y)N(0<= x< 1, 0<= y< 1) layer instead of a conventional InGaN/GaN layer. A nitride semiconductor light emitting device includes an N type nitride semiconductor layer(220), an electron emitting layer, an active layer and a P type nitride semiconductor layer. The electron emitting layer(230) is formed on the N type nitride semiconductor layer. The electron emitting layer is made of a predetermined nitride semiconductor layer containing a transitional element of the third group. The active layer(240) is formed on the electron emitting layer. The P type nitride semiconductor layer(250) is formed on the active layer. The electron emitting layer is composed of one or more GaxSc(1-x)N/AlyGa(1-y)N(0<= x< 1, 0<= y< 1) layers.