| 摘要 |
PROBLEM TO BE SOLVED: To cleanly maintain the orientation flat of a mirror finished surface without a process that forms and removes a new protective film in growing an epitaxial layer on a substrate. SOLUTION: A semiconductor epitaxial wafer comprising the substrate 1 having the orientation flat 2 formed by cleavage and a semiconductor epitaxial layer formed on the substrate 1, the epitaxial layer is formed on the substrate 1 with both ends 2a of the orientation flat 2 of the substrate 1 covered with a coating member 15 extended up to a region in a predetermined distance inwardly of the substrate, and an ungrown section where the epitaxial layer is not formed is present at both ends 2a of the orientation flat 2 when the coating member 15 is removed from the substrate 1. COPYRIGHT: (C)2007,JPO&INPIT
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